Method and apparatus for processing a substrate

ABSTRACT

Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate anneal chamber includes a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 15/402,142, filed Jan. 9, 2017, which is herein incorporated byreference in its entirety.

FIELD

Embodiments of the present disclosure generally relate to semiconductorsubstrate processing.

BACKGROUND

Formation of some devices on substrates (e.g., STT-RAM) requiresmultiple layers of thin films which are deposited in a depositionchamber, such as a physical vapor deposition (PVD) chamber. In someembodiments, the substrate needs to be rotated during the depositionprocess to obtain good film uniformity. For example, when the depositionprocess uses multiple cathodes and targets that are disposed off-axiswith respect to the substrate to deposit the different materials, thesubstrate needs to be rotated to ensure good film uniformity. Depositionof some layers may also require the substrate to be at a low temperatureand, subsequently, annealed. However, typical substrate supports includea pedestal that retains temperature when heated to high temperatures. Assuch, the pedestal must be allowed to cool down before any further lowtemperature processes are conducted. As a result, throughput isnegatively impacted.

To avoid such chamber downtime, the substrate may be transferred to aseparate anneal chamber, which may be coupled to the same cluster toolas the PVD chamber. However, the inventors have observed a need forin-situ anneal to improve the throughput of the PVD chamber. Theinventors have also observed a need for an ex-situ anneal chamber thatheats a substrate in a more uniform manner than conventional annealchambers.

Therefore, the inventors have provided embodiments of improved methodsand apparatus for processing substrates.

SUMMARY

Embodiments of methods and apparatus for processing a substrate aredisclosed herein. In some embodiments, a substrate support includes: asubstrate support pedestal having an upper surface to support asubstrate and an opposing bottom surface, wherein the substrate supportpedestal is formed of a material that is transparent to radiation; alamp assembly disposed below the substrate support pedestal and having aplurality of lamps configured to heat the substrate, wherein the lampassembly includes a central hole; a pedestal support extending throughthe central hole and coupled to the bottom surface of the substratesupport pedestal at a first end of the pedestal support to support thesubstrate support pedestal in a spaced apart relation to the pluralityof lamps; a shaft coupled to a second end of the pedestal supportopposite the first end; and a rotation assembly coupled to the shaftopposite the pedestal support to rotate the shaft, the pedestal support,and the substrate support pedestal with respect to the lamp assembly.

In some embodiments, a substrate anneal chamber includes: a chamber bodyhaving a chamber wall and an interior volume; a lamp assembly disposedin the interior volume and having a plurality of lamps configured toheat a substrate, wherein the lamp assembly is coupled to a shaft whichsupports the lamp assembly; a plurality of lift pins extending throughthe lamp assembly to support the substrate in a spaced apart relation tothe plurality of lamps; a slit valve disposed through a wall of thechamber body and above the lamp assembly to allow the substrate to passinto and out of the interior volume; an annular lamp assembly having atleast one lamp disposed in an upper portion of the substrate annealchamber above the slit valve; and a top reflector disposed above theannular lamp assembly to reflect radiation downwards towards the lampassembly.

In some embodiments, a method of processing a substrate includes:receiving a substrate to be processed; raising the substrate to aprocessing position; sputtering a sputtering target to deposit materialon the substrate; and rapidly heating the substrate to anneal thematerial deposited on the substrate.

Other and further embodiments of the present disclosure are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the disclosure depicted in the appendeddrawings. However, the appended drawings illustrate only typicalembodiments of the disclosure and are therefore not to be consideredlimiting of scope, for the disclosure may admit to other equallyeffective embodiments.

FIG. 1 depicts a schematic view of a process chamber having a rotatablesubstrate support in accordance with some embodiments of the presentdisclosure.

FIG. 2 depicts a cross-sectional view of an upper portion of a rotatablesubstrate support in accordance with some embodiments of the presentdisclosure.

FIG. 3 depicts a top view of a substrate heating apparatus in accordancewith some embodiments of the present disclosure.

FIG. 4 depicts a schematic cross-sectional view of an anneal chamber inaccordance with some embodiments of the present disclosure.

FIGS. 4A-B depict schematic views of an annular lamp for use in ananneal chamber in accordance with some embodiments of the presentdisclosure.

FIG. 5 is a flowchart depicting a method of processing a substrate inaccordance with some embodiments of the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity. Elements and features of one embodiment may be beneficiallyincorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

Embodiments of methods and apparatus for processing a substrate areprovided herein. In some embodiments, a substrate support pedestal isprovided that advantageously allows for in situ annealing of asubstrate, thus improving the throughput of the processing system byreducing downtime due to transferring of a substrate to an ex situanneal chamber. Embodiments of the present disclosure further provide ananneal chamber that advantageously provides more uniform heating of asubstrate. The inventive methods and apparatus advantageously improvethroughput by reducing either the downtime required for transferring thesubstrate to an ex situ anneal chamber or by reducing the anneal time.The inventive substrate support pedestal may be coupled to existingsubstrate supports that function as electrostatic chucks toadvantageously allow ease of switching between a pedestal havingchucking electrodes to chuck a substrate and a pedestal that may be usedto anneal a substrate as discussed herein.

FIG. 1 is a schematic cross-sectional view of plasma processing chamberin accordance with some embodiments of the present disclosure. In someembodiments, the plasma processing chamber is a physical vapordeposition (PVD) processing chamber. However, other types of processingchambers can also use or be modified for use with embodiments of theinventive substrate support described herein.

The chamber 100 is a vacuum chamber which is suitably adapted tomaintain sub-atmospheric pressures within a chamber interior volume 120during substrate processing. The chamber 100 includes a chamber body 106covered by a lid 104 which encloses a processing volume 119 located inthe upper half of chamber interior volume 120. The chamber 100 may alsoinclude one or more shields 105 circumscribing various chambercomponents to prevent unwanted reaction between such components andionized process material. The chamber body 106 and lid 104 may be madeof metal, such as aluminum. The chamber body 106 may be grounded via acoupling to ground 115.

A substrate support 124 is disposed within the chamber interior volume120 to support and retain a substrate S, such as a semiconductor wafer,for example, or other such substrate. The substrate support 124 maygenerally comprise a substrate support 150 (described in more detailbelow with respect to FIG. 2) and a hollow support shaft 112 forsupporting the substrate support 150. The hollow support shaft 112provides a conduit to provide, for example, process gases, fluids,coolants, power, or the like, to the substrate support 150.

In some embodiments, the hollow support shaft 112 is coupled to a motor113 which acts as a rotation assembly to rotate the hollow support shaft112 and, optionally, a vertical lift to provide vertical movement of thesubstrate support 150 between an upper, processing position (as shown inFIG. 1) and a lower, transfer position (not shown). A bellows assembly110 is disposed about the hollow support shaft 112 and is coupledbetween the substrate support 150 and a bottom surface 126 of chamber100 to provide a flexible seal that allows vertical motion of thesubstrate support 150 while preventing loss of vacuum from within thechamber 100. The bellows assembly 110 also includes a lower bellowsflange 164 in contact with an o-ring 165 or other suitable sealingelement which contacts bottom surface 126 to help prevent loss ofchamber vacuum.

The hollow support shaft 112 provides a conduit for coupling a fluidsource 142, a gas supply 141, a power supply 140, and RF sources (e.g.,RF bias power supply 117) to the substrate support 150, when necessary.In some embodiments, the RF bias power supply 117 is coupled to thesubstrate support via a RF match network 116. In some embodiments,however, and as will be evident from the description below, some of theelements extending through the hollow support shaft 112 may be omittedwhen the substrate support is used, for example, for an anneal processas described below.

A substrate lift 130 may include lift pins 109 mounted on a platform 108connected to a shaft 111 which is coupled to a second lift mechanism 132for raising and lowering the substrate lift 130 so that the substrate“S” may be placed on or removed from the substrate support 150. Thesubstrate support 150 includes thru-holes (described below) to receivethe lift pins 109. A bellows assembly 131 is coupled between thesubstrate lift 130 and bottom surface 126 to provide a flexible sealwhich maintains the chamber vacuum during vertical motion of thesubstrate lift 130.

The chamber 100 is coupled to and in fluid communication with a vacuumsystem 114 which includes a throttle valve (not shown) and vacuum pump(not shown) which are used to exhaust the chamber 100. The pressureinside the chamber 100 may be regulated by adjusting the throttle valveand/or vacuum pump. The chamber 100 is also coupled to and in fluidcommunication with a process gas supply 118 which may supply one or moreprocess gases to the chamber 100 for processing a substrate disposedtherein.

In operation, for example, a plasma 102 may be created in the chamberinterior volume 120 to perform one or more processes. The plasma 102 maybe created by coupling power from a plasma power source (e.g., RF plasmapower supply 170) to a process gas via one or more electrodes proximateto or within the chamber interior volume 120 to ignite the process gasand creating the plasma 102. In some embodiments, a bias power may alsobe provided from a bias power supply (e.g., RF bias power supply 117) toone or more electrodes (described below) disposed within the substratesupport 150 via a capacitively coupled bias plate (described below) toattract ions from the plasma towards the substrate S.

In some embodiments, for example where the chamber 100 is a PVD chamber,a target 166 comprising a source material to be deposited on a substrateS may be disposed above the substrate and within the chamber interiorvolume 120. The target 166 may be supported by a grounded conductiveportion of the chamber 100, for example an aluminum adapter through adielectric isolator. In other embodiments, the chamber 100 may include aplurality of targets in a multi-cathode arrangement for depositinglayers of different material using the same chamber.

A controllable DC power source 168 may be coupled to the chamber 100 toapply a negative voltage, or bias, to the target 166. The RF bias powersupply 117 may be coupled to the substrate support 124 in order toinduce a negative DC bias on the substrate S. In addition, in someembodiments, a negative DC self-bias may form on the substrate S duringprocessing. In some embodiments, an RF plasma power supply 170 may alsobe coupled to the chamber 100 to apply RF power to the target 166 tofacilitate control of the radial distribution of a deposition rate onsubstrate S. In operation, ions in the plasma 102 created in the chamber100 react with the source material from the target 166. The reactioncauses the target 166 to eject atoms of the source material, which arethen directed towards the substrate S, thus depositing material.

FIG. 2 depicts cross-sectional view of a top portion of a substratesupport 200 in accordance with some embodiments of the presentdisclosure. The substrate support 200 may be used as the substratesupport 124 shown in FIG. 1. The substrate support 200 includes asubstrate support pedestal 202, a shaft 204 extending from the bottom ofthe substrate support pedestal 202, and a housing 206 enclosing thesubstrate support pedestal 202, the shaft 204, and all the components(described below) of the substrate support 200.

The substrate support pedestal 202 is formed of a material that istransparent to radiation used to heat the substrate during processing sothat a substrate disposed atop an upper surface 225 of the substratesupport pedestal 202 may be heated without the substrate supportpedestal 202 absorbing most of the heat. Because conventional pedestalsabsorb a significant amount of heat, a cold substrate that is placed ona previously heated pedestal is immediately heated by the pedestal. As aresult, a process that requires a low temperature may not be performeduntil the pedestal cools down. However, because the inventive pedestalallows heat to pass through the pedestal, a low temperature process maybe performed shortly after annealing has been performed on the inventivepedestal. Furthermore, a temperature ramp rate of the annealing of thesubstrate is significantly increased and may be between about 22°C./second and about 35° C./second. In some embodiments, substratesupport pedestal 202 may be a quartz plate. In some embodiments, thesubstrate support pedestal 202 may have a thickness Ti between about 5mm and about 7 mm.

The substrate support 200 may also include a bearing 218 locatedproximate to the substrate support pedestal 202 (for example, withinabout 3 inches of the substrate support pedestal 202) to provideincreased rigidity to the substrate support 200 during rotation. Thebearing 218 may include, for example, a cross roller bearing, or thelike.

To facilitate heating of the substrate disposed on the substrate supportpedestal 202 the substrate support 200 includes a lamp assembly 278,which includes a plurality of lamps 214. In some embodiments, the lampassembly 278 may include a reflective plate 216 formed of or coated witha reflective material to reflect heat upwards towards the substratesupport pedestal 202. For example, the reflective plate 216 may beformed of polished aluminum or stainless steel. The plurality of lamps214 includes any number and type of lamp capable of emitting enough heatto heat the substrate support pedestal 202 via radiation. For example,the plurality of lamps 214 may include halogen lamps. In someembodiments, the total power output of the plurality of lamps 214 isbetween about 2.25 kilowatts (kW) and about 9.5 kW.

The plurality of lamps 214 receive power from a plurality of conductors205 disposed in a dielectric plate 203, such as a ceramic plate. Theconductors 205 may receive power from the power supply 140 or fromanother power supply (not shown) via heater power lines (e.g.,conductors) 223, 224. In some embodiments, a dielectric layer 213 may bedisposed atop the dielectric plate 203 to protect the conductors 205 andprevent inadvertent contact between the conductors 205 and any otherconductive elements of the substrate support 200. Openings in thedielectric layer 213 are provided to facilitate coupling the conductors205 to respective lamps 214. In some embodiments, the plurality of lampsmay be divided into a plurality of zones, for example, an inner array oflamps and an independently controllable outer array of lamps.

As explained above, upon activation of the plurality of lamps 214, heatis generated and a substrate disposed on the substrate support pedestal202 is heated. Because the heat is emitted in every direction, aplurality of fluid channels 215 are formed in the housing 206 to keepthe housing 206 cool. Any suitable coolant (e.g., water, propyleneglycol, or the like) may be flowed through the fluid channels 215 tocool the housing 206.

In order to facilitate placement and removal of a substrate on thesubstrate support pedestal 202, the substrate support 200 may alsoinclude a lift pin assembly including a plurality of lift pins 201 toraise and lower a substrate off of or onto the substrate supportpedestal 202. In some embodiments, at least one of the plurality of liftpins 201 may include a pyrometer to measure the temperature of thesubstrate support pedestal 202. However, the pyrometer may be disposedin any other location suitable to measure the temperature of thesubstrate.

The substrate support 200 further includes a pedestal support 222, towhich the substrate support pedestal 202 is removably coupled. In someembodiments, the pedestal support 222 includes a plurality of electricaltaps (two shown 209, 211) corresponding and coupled to the plurality ofchucking power lines 228. The plurality of electrical taps may becoupled to chucking electrodes in a pedestal used to electrostaticallychuck a substrate. However, in embodiments where there are no chuckingelectrodes in the substrate support pedestal 202, the plurality ofelectrical taps are not coupled to anything and are, therefore, notused.

In some embodiments, a metallic sleeve 207 may be disposed about thepedestal support 222 to shield the plurality of electrical taps fromradiation emitted by the plurality of lamps 214. In some embodiments,the metallic sleeve may be formed of aluminum. In some embodiments, thepedestal support 222 may be formed of aluminum oxide.

In some embodiments, the pedestal support 222 may include a centralchannel 220 disposed through the pedestal support 222 from a first end217 to a second end 212 for providing backside gases when such gases areneeded. However, in substrate support pedestal 202 illustrated in FIG.2, backside gases are not utilized and, as such, the substrate supportpedestal 202 does not include openings to allow backside gases to passfrom the central channel 220 through the substrate support pedestal 202.The central channel 220 is fluidly coupled to a conduit 221 which isdisposed within the shaft 204 and fluidly coupled to the gas supply 141.In some embodiments, a dynamic seal o-ring 226 is disposed between theouter wall of the conduit 221 and the inner wall of the central channel220. The dynamic seal o-ring 226 provides a dynamic seal to preventleakage of any backside gases during rotation of the pedestal support222 about the conduit 221, which is stationary. In embodiments where notused, the central channel 220 and the conduit 221 need not be provided.However, provision of the central channel 220 and the conduit 221facilitate rapid switching between the substrate support pedestal 202and other supports, such as an electrostatic chuck, without removal ofthe entire substrate support 200 from the process chamber.

The pedestal support 222 is coupled to a bottom surface of the substratesupport pedestal 202 at the first end 217 and to the shaft 204 at thesecond end 212. The pedestal support 222 supports the substrate supportpedestal 202 in a spaced apart relation to the plurality of lamps 214.As explained above, the substrate support pedestal 202 is removablycoupled to the substrate support so that switching between differentpedestals is relatively simple. As such, in some embodiments, thesubstrate support pedestal 202 may include a plurality of mounting holes255 extending through the substrate support pedestal 202 to accommodatea corresponding plurality of fixation elements (such as bolts, screws,clamps, or the like) to advantageously facilitate coupling the substratesupport pedestal 202 to the pedestal support 222 in a more easilyremovable and replaceable manner. The pedestal support 222 includes aplurality of blind holes 219 corresponding to the plurality of mountingholes 255 to receive ends of the fixation elements to facilitate thecoupling. The substrate support pedestal 202 further includes aplurality of lift pin holes 258 through which lift pins 201 extend tolift a substrate off of the substrate support pedestal 202 or receive asubstrate to be processed.

FIG. 3 depicts a top view of the lamp assembly 278 having the pluralityof lamps 214. As explained above, the plurality of lamps 214 heat thesubstrate disposed atop the substrate support pedestal 202. The lampassembly 278 also includes a central hole 302 through which the pedestalsupport 222 extends and the plurality of holes 270 to allow theplurality of lift pins 201 to pass through the lamp assembly 278.Although shown in a particular configuration, the shape and number ofthe lamps may be varied to provide a desired heat profile on thesubstrate support pedestal 202. In some embodiments, the plurality oflamps 214 includes an inner array of lamps 306 and an independentlycontrollable outer array of lamps 304.

FIG. 4 depicts a cross-sectional view of a substrate anneal chamber 400in accordance with some embodiments of the present disclosure. Thesubstrate anneal chamber 400 can be configured to be mounted to acluster tool and, in some embodiments, is mounted to a cluster toolhaving another process chamber, such as a physical vapor depositionchamber, also mounted thereto to advantageously facilitate transfer ofsubstrates from the deposition chamber to the anneal chamber quickly andwithout exposure to atmosphere.

In some embodiments, the substrate anneal chamber 400 includes a chamberbody 404 having a chamber wall 405, an upper heating assembly 460disposed atop the chamber wall 405, and an interior volume 407. Asupport assembly 480 is disposed within the interior volume 407. In someembodiments, the support assembly 480 includes a lamp assembly 470having a plurality of lamps 417 disposed on a shaft 410. To facilitatethe transfer of a substrate into and out of the substrate anneal chamber400, a slit valve 412 is formed in the chamber wall 405 above the lampassembly 470. A plurality of lift pins 414 extend through the lampassembly 470 to support the substrate in a spaced apart relation to theplurality of lamps 417.

In some embodiments, the upper heating assembly 460 includes an annularlamp assembly 430 disposed in an upper portion of the substrate annealchamber 400 above the slit valve 412. The annular lamp assembly 430includes at least one lamp 432 disposed between an upper annularreflector 434 and a lower annular reflector 436. In some embodiments,the upper annular reflector 434 is disposed on the lower annularreflector 436, which is supported by the chamber wall 405. In use,radiation is emitted by the at least one lamp 432 in every direction.Radiation that is emitted towards the lower annular reflector 436 isreflected upwards towards the upper annular reflector 434, whichreflects the radiation downwards towards a substrate disposed atop theplurality of lift pins 414.

In some embodiments, the at least one lamp 432 is supported using aplurality of hook-shaped arms 438 extending from the upper annularreflector 434. The upper and lower annular reflectors 434, 436 areconfigured to reflect radiation from the at least one lamp 432 towards asubstrate disposed atop the plurality of lift pins 414. To facilitatethe reflectivity of the annular reflectors, the upper and lower annularreflectors may be formed of a polished material, such as, for example,stainless steel. In embodiments in which the operating temperature ofthe substrate anneal chamber 400 is less than 600° C., the annularreflectors may alternatively be formed of aluminum. In some embodiments,the lower annular reflector may include an annular coolant channel 440through which a coolant is flowed to maintain the temperature of thelower annular reflector at or below a desired temperature. In someembodiments, the substrate anneal chamber may include at least onepyrometer 448 configured to measure the temperature of a substratedisposed atop the plurality of lift pins 414 to provide feedback tocontrol the annealing process.

In some embodiments, the upper heating assembly 460 further includes atop reflector 444 disposed above the annular lamp assembly 430 andconfigured to reflect radiation downwards towards a substrate disposedatop the plurality of lift pins 414 (i.e., towards the lamp assembly470). The top reflector 444 and the chamber wall 405 define the interiorvolume 407 of the substrate anneal chamber 400. A cap 446 may bedisposed atop the upper heating assembly 460 to serve as a barrierbetween the potentially high temperature components of the upper heatingassembly 460 and the surrounding environment. A plurality of o-rings 450may be disposed at interfaces of the various components (e.g., betweenthe upper heating assembly 460 and the chamber wall 405, between the cap446 and the upper heating assembly 460, etc.) to ensure a proper sealbetween the components.

The remainder of the support assembly 480 is similar to the substratesupport 200 described above. For example, in some embodiments, theplurality of lamps 417 receive power from a plurality of conductors 403disposed in a dielectric plate 402, such as a ceramic plate. Theconductors 403 may receive power from a power supply (not shown, butsimilar to the power supply 140) or from another power supply (notshown) via heater power lines (e.g., conductors) 420, 424. In someembodiments, a dielectric layer 422 may be disposed atop the dielectricplate 402 to protect the conductors 403 and prevent inadvertent contactbetween the conductors 403 and any other conductive elements of thesupport assembly 480. The support assembly 480 may also include coolantchannels 425 through which coolant is flowed to maintain the temperatureof the support assembly 480 at a desired temperature.

The lamp assembly 470 is substantially similar to the lamp assembly 278discussed above and shown in FIG. 3. As such, further discussion of thelamp assembly 470 will be omitted here for brevity.

FIGS. 4A and 4B depict schematic views of the at least one lamp 432 inaccordance with some embodiments of the present disclosure. In someembodiments, and as depicted in FIG. 4A, the at least one lamp 432 mayinclude one annular lamp 432 having a positive lead 433 and a negativelead 435 to be coupled to respective positive and negative terminals ofa power source (not shown). In some embodiments, and as depicted in FIG.4B, the at least one lamp may alternatively include two semicircularlamps 432A and 432B having respective positive leads 433A, 433B andnegative leads 435A, 435B.

FIG. 5 is a flowchart depicting a method 500 of processing a substratein accordance with some embodiments of the present disclosure. At 502, asubstrate to be processed is received on the substrate support in aprocess chamber (e.g., chamber 100). At 504, the substrate is raised toa processing position. At 506, at least one sputtering target issputtered to deposit material on the substrate. At 508, the substrate israpidly heated to anneal the material deposited on the substrate.

In some embodiments, the sputtering and the rapid heating are performedin the same chamber. For example, as explained above with regard to thesubstrate support 200, the substrate support pedestal 202 is formed of amaterial that is transparent to radiation (e.g., quartz) and thesubstrate is heated by the plurality of lamps 214 disposed beneath thesubstrate support pedestal 202. As such, a substrate may be processedand then annealed in the same chamber even if the process temperature islow (e.g., at or near room temperature).

In some embodiments, the sputtering and the rapid heating are performedin different chambers. For example, and as explained above with regardto the substrate anneal chamber 400, the substrate is transferred to thesubstrate anneal chamber 400 and is heated from above using the annularlamp assembly 430 disposed above the substrate and from below using theplurality of lamps 417 disposed beneath the substrate. A plurality ofreflectors (e.g., upper annular reflector 434, lower annular reflector436, top reflector 444, and lamp assembly reflective plate) areconfigured to reflect radiation towards the substrate.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof.

1. A substrate anneal chamber, comprising: a chamber body having achamber wall and an interior volume; a lamp assembly disposed in theinterior volume and having a plurality of lamps configured to heat asubstrate, wherein the lamp assembly is coupled to a shaft whichsupports the lamp assembly; a plurality of lift pins extending throughthe lamp assembly to support the substrate in a spaced apart relation tothe plurality of lamps; a slit valve disposed through a wall of thechamber body and above the lamp assembly to allow the substrate to passinto and out of the interior volume; an annular lamp assembly having atleast one lamp disposed in a processing volume in an upper portion ofthe substrate anneal chamber above the slit valve; and a top reflectordisposed above the annular lamp assembly to define an upper portion ofthe processing volume and to reflect radiation downwards towards thelamp assembly, wherein a bottom surface of the top reflector is exposedto the interior volume of the chamber body.
 2. The substrate annealchamber of claim 1, wherein the at least one lamp includes one annularlamp.
 3. The substrate anneal chamber of claim 1, wherein the at leastone lamp includes two semicircular lamps.
 4. The substrate annealchamber of claim 1, wherein the annular lamp assembly includes an upperannular reflector disposed above the at least one lamp and a lowerannular reflector disposed beneath the at least one lamp, and whereinthe upper annular reflector and the lower annular reflector areconfigured to reflect radiation from the at least one lamp towards asubstrate disposed atop the plurality of lift pins.
 5. The substrateanneal chamber of claim 4, wherein the lower annular reflector includesan annular coolant channel.
 6. The substrate anneal chamber of claim 4,wherein the lower annular reflector includes a lamp facing surface thatextends upwards and radially outwards.
 7. The substrate anneal chamberof claim 1, wherein the top reflector includes a recess on a processingvolume facing side, and wherein a width of the recess is greater than awidth of the slit valve.
 8. The substrate anneal chamber of claim 1,wherein the lamp assembly includes a reflective plate disposed beneaththe plurality of lamps and configured to reflect radiation from theplurality of lamps towards the substrate.
 9. The substrate annealchamber of claim 1, wherein the plurality of lamps includes halogenlamps and has a total power output between about 2.25 kW and about 9.5kW.
 10. The substrate anneal chamber of claim 9, wherein the pluralityof lamps includes an inner array of lamps and an independentlycontrollable outer array of lamps.
 11. A substrate anneal chamber,comprising: a chamber body having a chamber wall and an interior volume;a lamp assembly disposed in the interior volume and having a pluralityof lamps configured to heat a substrate; a slit valve disposed through awall of the chamber body and above the lamp assembly to allow thesubstrate to pass into and out of the interior volume; an annular lampassembly having at least one lamp disposed in a processing volume in anupper portion of the substrate anneal chamber above the slit valve; anda top reflector disposed above the annular lamp assembly, wherein abottom surface of the top reflector is exposed to the interior volume ofthe chamber body.
 12. The substrate anneal chamber of claim 11, whereinthe at least one lamp includes one annular lamp or two semicircularlamps.
 13. The substrate anneal chamber of claim 11, wherein a pluralityof lift pins extending through the lamp assembly to support thesubstrate in a spaced apart relation to the plurality of lamps.
 14. Thesubstrate anneal chamber of claim 11, further comprising a cap disposedatop the top reflector.
 15. The substrate anneal chamber of claim 11,wherein the annular lamp assembly includes at least one lamp disposedbetween an upper annular reflector and a lower annular reflector.
 16. Amethod of processing a substrate, comprising: receiving a substrate tobe processed; raising the substrate to a processing position; sputteringa sputtering target to deposit material on the substrate; and rapidlyheating the substrate to anneal the material deposited on the substrate.17. The method of claim 16, wherein sputtering and rapidly heating thesubstrate are performed in the same chamber, and wherein the substrateis disposed on a quartz plate and is rapidly heated by a plurality oflamps disposed beneath the quartz plate.
 18. The method of claim 16,wherein rapidly heating the substrate comprises: transferring thesubstrate to an anneal chamber having an annular lamp assembly disposedabove the substrate, a plurality of lamps disposed beneath thesubstrate, and a plurality of reflectors configured to reflect radiationtowards the substrate.
 19. The method of claim 18, wherein the pluralityof reflectors comprises: a top reflector disposed above the annular lampassembly to reflect radiation downwards towards the substrate; an upperannular reflector disposed above at least one lamp of the annular lampassembly; and a lower annular reflector disposed beneath the at leastone lamp to reflect radiation upwards towards the upper annularreflector, which reflects the radiation downwards towards the substrate.20. The method of claim 16, wherein raising the substrate to aprocessing position comprises using a substrate lift that includes liftpins mounted on a platform connected to a lift mechanism for raising thesubstrate lift.